Samsung M393B2G70BH0-YK0 16GB vs Avant Technology W6451U67J5213NB 4GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Avant Technology W6451U67J5213NB 4GB

Avant Technology W6451U67J5213NB 4GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

低于PassMark测试中的延时，ns

63 76

左右 17% 更低的延时

Avant Technology W6451U67J5213NB 4GB

需要考虑的原因
Avant Technology W6451U67J5213NB 4GB

报告一个错误

更快的读取速度，GB/s

14.4 8.1

测试中的平均数值
更快的写入速度，GB/s

7.7 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Avant Technology W6451U67J5213NB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 76
读取速度，GB/s

8.1 14.4
写入速度，GB/s

7.5 7.7
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1945 1718

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N

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A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston 9965698-001.A00G 16GB

Kingston 9965698-001.A00G 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

G Skill Intl F4-2400C17-16GIS 16GB

G Skill Intl F4-2400C17-16GIS 16GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-3600C14-16GVKA 16GB

G Skill Intl F4-3600C14-16GVKA 16GB

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A-DATA Technology VDQVE1B16 2GB

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Micron Technology 72ASS4G72LZ-2G1A1 32GB