Samsung M393B2G70BH0-YK0 16GB vs Corsair CMD64GX4M4A2400C14 16GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Corsair CMD64GX4M4A2400C14 16GB

Corsair CMD64GX4M4A2400C14 16GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Corsair CMD64GX4M4A2400C14 16GB

需要考虑的原因
Corsair CMD64GX4M4A2400C14 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 63

左右 -142% 更低的延时
更快的读取速度，GB/s

15.3 8.1

测试中的平均数值
更快的写入速度，GB/s

11.2 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Corsair CMD64GX4M4A2400C14 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 26
读取速度，GB/s

8.1 15.3
写入速度，GB/s

7.5 11.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1945 2987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMN1740HC48D8F667A 2GB

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Kingston KVR16N11/8-SP 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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G Skill Intl F4-4000C18-8GVK 8GB

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Corsair CMY16GX3M4A2133C8 4GB

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Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

G Skill Intl F4-4000C16-16GTRSA 16GB

G Skill Intl F4-4000C16-16GTRSA 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Panram International Corporation D4N2400PS-8G 8GB

Panram International Corporation D4N2400PS-8G 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

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Crucial Technology BLS8G4D30BESBK.8FB 8GB