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Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
比较
Samsung M393B2G70BH0-YK0 16GB vs Crucial Technology BLS16G4D32AESB.M16FE 16GB
总分
Samsung M393B2G70BH0-YK0 16GB
总分
Crucial Technology BLS16G4D32AESB.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB
报告一个错误
需要考虑的原因
Crucial Technology BLS16G4D32AESB.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
63
左右 -117% 更低的延时
更快的读取速度,GB/s
18.5
8.1
测试中的平均数值
更快的写入速度,GB/s
15.2
7.5
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
63
29
读取速度,GB/s
8.1
18.5
写入速度,GB/s
7.5
15.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1945
3784
Samsung M393B2G70BH0-YK0 16GB RAM的比较
Samsung M393B2G70DB0-YK0 16GB
Samsung M392B1K70CM0-YH9 8GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AD73I1B1672EG 2GB
Neo Forza NMUD416E82-3600 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS16G4D32AESB.M16FE 16GB
Corsair CMZ16GX3M2A2400C10 8GB
DSL Memory CIR-W4SUSS2408G 8GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMW64GX4M2D3000C16 32GB
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F4-3200C16-32GTZN 32GB
PNY Electronics PNY 2GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
Corsair VS1GB800D2 1GB
Kingston CBD26D4U9S8MH-8 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 3600 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-4000C18-16GTRS 16GB
AMD R534G1601U1S-UO 4GB
Kingston 9905734-061.A00G 32GB
Samsung M393B5170FH0-CK0 4GB
Apacer Technology 78.C1GS7.AUC0B 8GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2933C16-8GTZRX 8GB
报告一个错误
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Bug description
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