Samsung M393B2G70BH0-YK0 16GB vs Crucial Technology CT16G4DFD8266.C16FP 16GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Crucial Technology CT16G4DFD8266.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8266.C16FP 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 63

左右 -85% 更低的延时
更快的读取速度，GB/s

15.7 8.1

测试中的平均数值
更快的写入速度，GB/s

13.7 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 34
读取速度，GB/s

8.1 15.7
写入速度，GB/s

7.5 13.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1945 3153

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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Team Group Inc. TEAMGROUP-UD4-4300 8GB

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Corsair CMK8GX4M1D2666C16 8GB

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Mushkin 991586 2GB

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Samsung M471A1K1KBB1-CRC 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

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Samsung V-GeN D4S4GL30A16TS5 4GB

G Skill Intl F3-2800C12-8GTXDG 8GB

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Kingston 9905702-014.A00G 8GB

Kingston 9905702-014.A00G 8GB

Kingston 99U5403-468.A00LF 8GB

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Crucial Technology CT8G4DFS8213.C8FDD1 8GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB