Samsung M393B2G70BH0-YK0 16GB vs Kingston 99U5643-001.A00G 8GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

Kingston 99U5643-001.A00G 8GB

Kingston 99U5643-001.A00G 8GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

Kingston 99U5643-001.A00G 8GB

需要考虑的原因
Kingston 99U5643-001.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 63

左右 -103% 更低的延时
更快的读取速度，GB/s

15.6 8.1

测试中的平均数值
更快的写入速度，GB/s

11.2 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

Kingston 99U5643-001.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 31
读取速度，GB/s

8.1 15.6
写入速度，GB/s

7.5 11.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1945 3024

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 9905625-004.A03LF 8GB

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Samsung M393B2G70BH0-YK0 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology BLS4G4D240FSC.8FARG 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMK16GX4M4B3866C18 4GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Corsair CM4X8GD3200C16K2E 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMK16GX4M2B3200C14 8GB

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Kingston 9905403-156.A00LF 2GB

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Kingston KMKYF9-HYA 8GB

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Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB