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Samsung M393B2G70BH0-YK0 16GB
Kingston XWM8G1-MIE 32GB

Samsung M393B2G70BH0-YK0 16GB vs Kingston XWM8G1-MIE 32GB

总分
star star star star star
Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分
star star star star star
Kingston XWM8G1-MIE 32GB

Kingston XWM8G1-MIE 32GB

差异 规格 评论

差异

Samsung M393B2G70BH0-YK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB
报告一个错误
Kingston XWM8G1-MIE 32GB 需要考虑的原因
Kingston XWM8G1-MIE 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 63
    左右 -110% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 8.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-YK0 16GB
Kingston XWM8G1-MIE 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 30
  • 读取速度，GB/s
    8.1 left arrow 16.9
  • 写入速度，GB/s
    7.5 left arrow 16.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1945 left arrow 3704

Samsung M393B2G70BH0-YK0 16GB RAM的比较

Samsung M393B2G70DB0-YK0 16GB
Samsung M392B1K70CM0-YH9 8GB

Kingston XWM8G1-MIE 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM5S16GM4800A40K2 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
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Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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Crucial Technology CT8G4SFD824A.C16FDD2 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
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Apacer Technology GD2.1527WT.001 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
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内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
内存RAM
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Avant Technology F6451U64F9333G 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
内存RAM