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Samsung M393B2G70BH0-YK0 16GB
V-GEN D4H16GS24A8 16GB

Samsung M393B2G70BH0-YK0 16GB vs V-GEN D4H16GS24A8 16GB

总分
star star star star star
Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分
star star star star star
V-GEN D4H16GS24A8 16GB

V-GEN D4H16GS24A8 16GB

差异 规格 评论

差异

Samsung M393B2G70BH0-YK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB
报告一个错误
  • 更快的写入速度，GB/s
    7.5 left arrow 7.3
    测试中的平均数值
V-GEN D4H16GS24A8 16GB 需要考虑的原因
V-GEN D4H16GS24A8 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 63
    左右 -174% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-YK0 16GB
V-GEN D4H16GS24A8 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 23
  • 读取速度，GB/s
    8.1 left arrow 14.5
  • 写入速度，GB/s
    7.5 left arrow 7.3
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1945 left arrow 2361

Samsung M393B2G70BH0-YK0 16GB RAM的比较

Samsung M393B2G70DB0-YK0 16GB
Samsung M392B1K70CM0-YH9 8GB

V-GEN D4H16GS24A8 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
V-GEN D4H16GS24A8 16GB
V-GEN D4H16GS24A8 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Transcend Information TS1GLH64V4B 8GB
Transcend Information TS1GLH64V4B 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Corsair CMU32GX4M2C3000C15 16GB
Corsair CMU32GX4M2C3000C15 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Micron Technology 16ATF1G64AZ-2G1B1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Samsung V-GeN D4S4GL30A16TS5 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMK16GX4M2C3600C20 8GB
Corsair CMK16GX4M2C3600C20 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
InnoDisk Corporation M4S0-4GSSNCIK 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMW256GX4M8E3200C16 32GB
Corsair CMW256GX4M8E3200C16 32GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT16G4S24AM.M16FE 16GB
Crucial Technology CT16G4S24AM.M16FE 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
Crucial Technology BLS4G4D240FSA.M8F 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMD32GX4M2B3000C15 16GB
Corsair CMD32GX4M2B3000C15 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology 8G4US2400.M8B1 8GB
Crucial Technology 8G4US2400.M8B1 8GB
内存RAM