Samsung M393B5170FH0-CH9 4GB vs Crucial Technology BL16G32C16U4B.16FE 16GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Crucial Technology BL16G32C16U4B.16FE 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4B.16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 49

左右 -69% 更低的延时
更快的读取速度，GB/s

20 10

测试中的平均数值
更快的写入速度，GB/s

15.9 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Crucial Technology BL16G32C16U4B.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 29
读取速度，GB/s

10.0 20.0
写入速度，GB/s

8.2 15.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2116 3713

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

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A-DATA Technology DOVF1B163G2G 2GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

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