Samsung M393B5170FH0-CH9 4GB vs G Skill Intl F4-3200C14-8GTZSW 8GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

G Skill Intl F4-3200C14-8GTZSW 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZSW 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 49

左右 -53% 更低的延时
更快的读取速度，GB/s

15.6 10

测试中的平均数值
更快的写入速度，GB/s

13.2 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

G Skill Intl F4-3200C14-8GTZSW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 32
读取速度，GB/s

10.0 15.6
写入速度，GB/s

8.2 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2116 3000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

Crucial Technology CT16G4DFD8266.M16FH 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Lexar Co Limited LD4AU008G-H3200GST 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

A-DATA Technology AO1P24HC4N2-BWCS 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Corsair CMT64GX4M4C3466C16 16GB

Corsair CMT64GX4M4C3466C16 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Kingston MSI24D4U7S8MH-8 8GB

Kingston MSI24D4U7S8MH-8 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Micron Technology 16ATF1G64AZ-2G1A1 8GB

Micron Technology 16ATF1G64AZ-2G1A1 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-2400C15-8GVB 8GB

G Skill Intl F4-2400C15-8GVB 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB

SK Hynix V-GeN D4H8GL26A8TX5 8GB