Samsung M393B5170FH0-CH9 4GB vs Kingston 9905678-105.A00G 8GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

Kingston 9905678-105.A00G 8GB

Kingston 9905678-105.A00G 8GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

Kingston 9905678-105.A00G 8GB

需要考虑的原因
Kingston 9905678-105.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 49

左右 -69% 更低的延时
更快的读取速度，GB/s

17.4 10

测试中的平均数值
更快的写入速度，GB/s

12.3 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

Kingston 9905678-105.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 29
读取速度，GB/s

10.0 17.4
写入速度，GB/s

8.2 12.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2116 3120

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMU64GX4M4C3000C15 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMK16GX4M2Z2933C16 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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Corsair CM4X8GE2666C16K4 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB