Samsung M393B5170FH0-CH9 4GB vs V-GEN D4H4GL30A8TS5 4GB

总分

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

总分

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB

差异规格评论

差异

Samsung M393B5170FH0-CH9 4GB

需要考虑的原因
Samsung M393B5170FH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

49 90

左右 46% 更低的延时

V-GEN D4H4GL30A8TS5 4GB

需要考虑的原因
V-GEN D4H4GL30A8TS5 4GB

报告一个错误

更快的读取速度，GB/s

15.6 10

测试中的平均数值
更快的写入速度，GB/s

8.7 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5170FH0-CH9 4GB

V-GEN D4H4GL30A8TS5 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 90
读取速度，GB/s

10.0 15.6
写入速度，GB/s

8.2 8.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2116 1743

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-2800 8GB

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SK Hynix HMA851S6DJR6N-XN 4GB

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Kingston 9905403-444.A00LF 4GB

Corsair CMW32GX4M2C3466C16 16GB

Corsair CMW32GX4M2C3466C16 16GB

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Crucial Technology CT25664AA800.M16FG 2GB

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Crucial Technology CT16G4SFD8266.C16FE 16GB

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SK Hynix HMT425S6CFR6A-PB 2GB

Kingston KHX3000C16/16GX 16GB

Kingston KHX3000C16/16GX 16GB