Samsung M393B5270CH0-CH9 4GB vs Corsair CMG32GX4M2D3600C18 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Corsair CMG32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMG32GX4M2D3600C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 42

左右 -35% 更低的延时
更快的读取速度，GB/s

17.8 10.6

测试中的平均数值
更快的写入速度，GB/s

14.6 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Corsair CMG32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 31
读取速度，GB/s

10.6 17.8
写入速度，GB/s

9.0 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 3573

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-017.A00LF 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Golden Empire CL15-17-17 D4-3000 8GB

Golden Empire CL15-17-17 D4-3000 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Corsair CMK16GX4M2G4000C16 8GB

Corsair CMK16GX4M2G4000C16 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

G Skill Intl F4-2400C17-8GVR 8GB

G Skill Intl F4-2400C17-8GVR 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Apacer Technology 78.BAGSR.4030B 4GB

Apacer Technology 78.BAGSR.4030B 4GB