Samsung M393B5270CH0-CH9 4GB vs Corsair CMU32GX4M2C3333C16 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Corsair CMU32GX4M2C3333C16 16GB

Corsair CMU32GX4M2C3333C16 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 53

左右 21% 更低的延时

Corsair CMU32GX4M2C3333C16 16GB

需要考虑的原因
Corsair CMU32GX4M2C3333C16 16GB

报告一个错误

更快的读取速度，GB/s

20 10.6

测试中的平均数值
更快的写入速度，GB/s

10.2 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Corsair CMU32GX4M2C3333C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 53
读取速度，GB/s

10.6 20.0
写入速度，GB/s

9.0 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2423 2440

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C18-32GTRS 32GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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SK Hynix HMA851U6CJR6N-VK 4GB

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Kingston 9905316-106.A02LF 1GB

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G Skill Intl F4-3466C16-8GVR 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Corsair CMK32GX4M4D3200C16 8GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Kingston MSI24D4U7S8MB-8 8GB

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Hewlett-Packard 7EH68AA# 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Samsung M47472K43DB1-CTD 16GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Corsair CM4X16GE2666C18S2 16GB

Corsair CM4X16GE2666C18S2 16GB

SK Hynix HMT325U6BFR8C-H9 2GB

SK Hynix HMT325U6BFR8C-H9 2GB

SK Hynix HMT125U6BFR8C-H9 2GB

SK Hynix HMT125U6BFR8C-H9 2GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

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G Skill Intl F4-4266C19-8GTZR 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Dust Leopard DDR4-2400 CL17 8GB 8GB

Dust Leopard DDR4-2400 CL17 8GB 8GB