Samsung M393B5270CH0-CH9 4GB vs Crucial Technology BLS4G4D240FSA.M8F 4GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Crucial Technology BLS4G4D240FSA.M8F 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSA.M8F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 42

左右 -56% 更低的延时
更快的读取速度，GB/s

13.6 10.6

测试中的平均数值
更快的写入速度，GB/s

9.8 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 27
读取速度，GB/s

10.6 13.6
写入速度，GB/s

9.0 9.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2423 2403

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Patriot Memory (PDP Systems) 3000 C18 Series 16GB

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Samsung M393B5270CH0-CH9 4GB

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Kingston 9905599-029.A00G 4GB

Kingston 9905599-029.A00G 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB