Samsung M393B5270CH0-CH9 4GB vs Crucial Technology CT16G4DFD832A.M16FJ 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Crucial Technology CT16G4DFD832A.M16FJ 16GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Crucial Technology CT16G4DFD832A.M16FJ 16GB

需要考虑的原因
Crucial Technology CT16G4DFD832A.M16FJ 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 42

左右 -35% 更低的延时
更快的读取速度，GB/s

16.1 10.6

测试中的平均数值
更快的写入速度，GB/s

14.4 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT16G4DFD832A.M16FJ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 31
读取速度，GB/s

10.6 16.1
写入速度，GB/s

9.0 14.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2423 3416

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix GKE160UD102408-2400 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Corsair CMU16GX4M2A2666C16 8GB

Corsair CMU16GX4M2A2666C16 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

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Corsair CMW64GX4M8C3000C15 8GB

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