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Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Samsung M393B5270CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 42
    左右 -68% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.7 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 25
  • 读取速度，GB/s
    10.6 left arrow 15.3
  • 写入速度，GB/s
    9.0 left arrow 12.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 2704

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB RAM的比较

Kingston 99U5428-040.A00LF 4GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-3200C14-8GTRG 8GB
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内存RAM
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内存RAM
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内存RAM