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Samsung M393B5270CH0-CH9 4GB
Kingston 99U5712-002.A00G 16GB

Samsung M393B5270CH0-CH9 4GB vs Kingston 99U5712-002.A00G 16GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
Kingston 99U5712-002.A00G 16GB

Kingston 99U5712-002.A00G 16GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
Kingston 99U5712-002.A00G 16GB 需要考虑的原因
Kingston 99U5712-002.A00G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 42
    左右 -56% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
Kingston 99U5712-002.A00G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 27
  • 读取速度，GB/s
    10.6 left arrow 17.6
  • 写入速度，GB/s
    9.0 left arrow 14.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 3036

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

Kingston 99U5712-002.A00G 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BL8G30C15U4B.8FE 8GB
Crucial Technology BL8G30C15U4B.8FE 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
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Corsair CMT32GX4M2K4000C19 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-3200C14-16GTZKO 16GB
G Skill Intl F4-3200C14-16GTZKO 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK32GX4M2Z3200C16 16GB
Corsair CMK32GX4M2Z3200C16 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
SK Hynix HMA41GS6AFR8N-TF 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Kingston 9905624-018.A00G 8GB
Kingston 9905624-018.A00G 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Mushkin 99[2/7/4]192F 4GB
Mushkin 99[2/7/4]192F 4GB
内存RAM
Unigen Corporation U51U7200N8DD-BDH 4GB
Unigen Corporation U51U7200N8DD-BDH 4GB
Corsair CMD16GX4M4B3200C16 4GB
Corsair CMD16GX4M4B3200C16 4GB
内存RAM