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Samsung M393B5270CH0-CH9 4GB
Kingston MSI26D4S9S8HJ-8 8GB

Samsung M393B5270CH0-CH9 4GB vs Kingston MSI26D4S9S8HJ-8 8GB

总分
star star star star star
Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分
star star star star star
Kingston MSI26D4S9S8HJ-8 8GB

Kingston MSI26D4S9S8HJ-8 8GB

差异 规格 评论

差异

Samsung M393B5270CH0-CH9 4GB 需要考虑的原因
Samsung M393B5270CH0-CH9 4GB
报告一个错误
Kingston MSI26D4S9S8HJ-8 8GB 需要考虑的原因
Kingston MSI26D4S9S8HJ-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 42
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B5270CH0-CH9 4GB
Kingston MSI26D4S9S8HJ-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 35
  • 读取速度，GB/s
    10.6 left arrow 16.8
  • 写入速度，GB/s
    9.0 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 2962

Samsung M393B5270CH0-CH9 4GB RAM的比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-YH9 4GB

Kingston MSI26D4S9S8HJ-8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3400C16-8GSXW 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X16GE2666C18S4 16GB
Corsair CM4X16GE2666C18S4 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kingston 9905744-062.A00G 32GB
Kingston 9905744-062.A00G 32GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston MSI26D4S9S8HJ-8 8GB
Kingston MSI26D4S9S8HJ-8 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
V-GEN D4H8GL36A8TXV 8GB
V-GEN D4H8GL36A8TXV 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Avant Technology W641GU42J7240NC 8GB
Avant Technology W641GU42J7240NC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4000C19-16GTZSW 16GB
G Skill Intl F4-4000C19-16GTZSW 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905678-043.A00G 8GB
Kingston 9905678-043.A00G 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863QZS-CE6 1GB
Samsung M3 78T2863QZS-CE6 1GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-3200C16-8GRKB 8GB
G Skill Intl F4-3200C16-8GRKB 8GB
内存RAM