Samsung M393B5270CH0-CH9 4GB vs Micron Technology 8ATF2G64HZ-3G2E1 16GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

Micron Technology 8ATF2G64HZ-3G2E1 16GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

Micron Technology 8ATF2G64HZ-3G2E1 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 42

左右 -20% 更低的延时
更快的读取速度，GB/s

15.7 10.6

测试中的平均数值
更快的写入速度，GB/s

12.1 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

Micron Technology 8ATF2G64HZ-3G2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 35
读取速度，GB/s

10.6 15.7
写入速度，GB/s

9.0 12.1
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2423 3045

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

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Kingston 9905663-021.A00G 16GB

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Corsair CM4X16GC3600C18K2D 16GB

Corsair CM4X16GC3600C18K2D 16GB