Samsung M393B5270CH0-CH9 4GB vs SK Hynix HMA425S6AFR6N-UH 2GB

总分

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

总分

SK Hynix HMA425S6AFR6N-UH 2GB

SK Hynix HMA425S6AFR6N-UH 2GB

差异规格评论

差异

Samsung M393B5270CH0-CH9 4GB

需要考虑的原因
Samsung M393B5270CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 86

左右 51% 更低的延时
更快的写入速度，GB/s

9.0 6.3

测试中的平均数值

SK Hynix HMA425S6AFR6N-UH 2GB

需要考虑的原因
SK Hynix HMA425S6AFR6N-UH 2GB

报告一个错误

更快的读取速度，GB/s

13.5 10.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B5270CH0-CH9 4GB

SK Hynix HMA425S6AFR6N-UH 2GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 86
读取速度，GB/s

10.6 13.5
写入速度，GB/s

9.0 6.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2423 1469

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Kingston KTP9W1-MIE 16GB

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Crucial Technology BL8G26C16U4B.8FD 8GB

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Kingston KHX3200C16D4/8GX 8GB

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Kingston 9905403-011.A03LF 2GB

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Corsair CMD16GX4M2B2400C10 8GB

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Crucial Technology BLS4G4S240FSD.8FAR 4GB

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A-DATA Technology AD5U48008G-B 8GB

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Kingston XF875V-HYA 8GB

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Smart Modular SH564568FH8N0QHSCG 2GB

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Kingston 9965662-010.A00G 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Kingston 99U5584-017.A00LF 4GB

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Corsair CMR32GX4M4C3466C16 8GB

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Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB