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Samsung M395T5160QZ4-CE66 2GB
Corsair CMD32GX4M2C3200C14T 16GB

Samsung M395T5160QZ4-CE66 2GB vs Corsair CMD32GX4M2C3200C14T 16GB

总分
star star star star star
Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分
star star star star star
Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

差异 规格 评论

差异

Samsung M395T5160QZ4-CE66 2GB 需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,072.7 left arrow 13.9
    测试中的平均数值
Corsair CMD32GX4M2C3200C14T 16GB 需要考虑的原因
Corsair CMD32GX4M2C3200C14T 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 75
    左右 -275% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Corsair CMD32GX4M2C3200C14T 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 20
  • 读取速度，GB/s
    2,730.3 left arrow 18.4
  • 写入速度，GB/s
    2,072.7 left arrow 13.9
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3426

Samsung M395T5160QZ4-CE66 2GB RAM的比较

Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB

Corsair CMD32GX4M2C3200C14T 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Panram International Corporation W4U2400PS-8G 8GB
Panram International Corporation W4U2400PS-8G 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Corsair CMD32GX4M2C3200C14T 16GB
Corsair CMD32GX4M2C3200C14T 16GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Golden Empire CL16-18-18 D4-3000 16GB
Golden Empire CL16-18-18 D4-3000 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
SK Hynix HMA41GU6MFR8N-TF 8GB
内存RAM
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMAA1GS6CJR6N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
SK Hynix HMA81GS6CJR8N-XN 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3000C15-8GTZR 8GB
G Skill Intl F4-3000C15-8GTZR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4SFS824A.M8FB 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Smart Modular SMS4WEC8C1K0446FCG 8GB
Smart Modular SMS4WEC8C1K0446FCG 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-2400C16-16GRS 16GB
G Skill Intl F4-2400C16-16GRS 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2800C15-16GRKD 16GB
G Skill Intl F4-2800C15-16GRKD 16GB
内存RAM
G Skill Intl F3-10666CL9-4GBSQ 4GB
G Skill Intl F3-10666CL9-4GBSQ 4GB
Super Talent F24UB16GV 16GB
Super Talent F24UB16GV 16GB
内存RAM