Samsung M395T5160QZ4-CE66 2GB vs Corsair CMK64GX4M4C3200C16 16GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

Corsair CMK64GX4M4C3200C16 16GB

Corsair CMK64GX4M4C3200C16 16GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

更快的读取速度，GB/s

2 17

测试中的平均数值
更快的写入速度，GB/s

2,072.7 15.5

测试中的平均数值

Corsair CMK64GX4M4C3200C16 16GB

需要考虑的原因
Corsair CMK64GX4M4C3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 75

左右 -134% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

Corsair CMK64GX4M4C3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 32
读取速度，GB/s

2,730.3 17.0
写入速度，GB/s

2,072.7 15.5
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 3637

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F3-2800C12-8GTXDG 8GB

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Corsair CM4X4GF2400C16S2 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Kingston KYXC0V-MIB 16GB

Kingston KYXC0V-MIB 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB