Samsung M395T5160QZ4-CE66 2GB vs Crucial Technology BLS8G4S26BFSD.16FD2 8GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值
更快的写入速度，GB/s

2,072.7 11.5

测试中的平均数值

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 75

左右 -200% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 25
读取速度，GB/s

2,730.3 14.9
写入速度，GB/s

2,072.7 11.5
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 2466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung DDR3 8GB 1600MHz 8GB

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A-DATA Technology AE4S240038G17-BHYA 8GB

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Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMK32GX4M4A2400C12 8GB

Corsair CMK32GX4M4A2400C12 8GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Crucial Technology BL8G32C16U4W.8FE 8GB

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Corsair CML8GX3M2A1600C9 4GB

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Corsair CMK32GX4M2B3466C16 16GB

Corsair CMK32GX4M2B3466C16 16GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Corsair CMW128GX4M8X3600C18 16GB

Corsair CMW128GX4M8X3600C18 16GB