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Samsung M395T5160QZ4-CE66 2GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Samsung M395T5160QZ4-CE66 2GB vs Crucial Technology CT4G4DFS8213.C8FDD2 4GB

总分
star star star star star
Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FDD2 4GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB

差异 规格 评论

差异

Samsung M395T5160QZ4-CE66 2GB 需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,072.7 left arrow 10.3
    测试中的平均数值
Crucial Technology CT4G4DFS8213.C8FDD2 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 75
    左右 -159% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 29
  • 读取速度，GB/s
    2,730.3 left arrow 16.0
  • 写入速度，GB/s
    2,072.7 left arrow 10.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 2384

Samsung M395T5160QZ4-CE66 2GB RAM的比较

Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB

Crucial Technology CT4G4DFS8213.C8FDD2 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
Corsair CMG16GX4M2D3600C18 8GB
Corsair CMG16GX4M2D3600C18 8GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMK64GX4M8X3600C18 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Avant Technology W642GU42J9266N8 16GB
Avant Technology W642GU42J9266N8 16GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMT32GX4M2Z3600C18 16GB
Corsair CMT32GX4M2Z3600C18 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
Lexar Co Limited LD4AS016G-H3200GST 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston CBD24D4U7S8MA-8 8GB
Kingston CBD24D4U7S8MA-8 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-3466C16-8GTZSW 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston 99U5663-006.A00G 16GB
Kingston 99U5663-006.A00G 16GB
内存RAM