Samsung M395T5160QZ4-CE66 2GB vs Heoriady M471A1K43CB1-CTD 8GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

更快的读取速度，GB/s

2 10.5

测试中的平均数值

Heoriady M471A1K43CB1-CTD 8GB

需要考虑的原因
Heoriady M471A1K43CB1-CTD 8GB

报告一个错误

低于PassMark测试中的延时，ns

51 75

左右 -47% 更低的延时
更快的写入速度，GB/s

5.5 2,072.7

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

Heoriady M471A1K43CB1-CTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 51
读取速度，GB/s

2,730.3 10.5
写入速度，GB/s

2,072.7 5.5
内存带宽，mbps

5300 21300

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 1941

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA82GS6DJR8N-XN 16GB

SK Hynix HMA82GS6DJR8N-XN 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Wilk Elektronik S.A. IRX3000D464L16/16G 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Crucial Technology BL16G36C16U4WL.M16FE 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Kingston M378A1K43CB2-CRC 8GB

Kingston M378A1K43CB2-CRC 8GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3000C14-8GTZ 8GB

G Skill Intl F4-3000C14-8GTZ 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Hewlett-Packard 48U45AA# 16GB

Hewlett-Packard 48U45AA# 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

G Skill Intl F4-3200C16-16GTZA 16GB

G Skill Intl F4-3200C16-16GTZA 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB

Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 99U5700-010.A00G 8GB

Kingston 99U5700-010.A00G 8GB