Samsung M4 70T2953EZ3-CE6 1GB vs Corsair CMT128GX4M4C3200C16 32GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Corsair CMT128GX4M4C3200C16 32GB

Corsair CMT128GX4M4C3200C16 32GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 13.5

测试中的平均数值

Corsair CMT128GX4M4C3200C16 32GB

需要考虑的原因
Corsair CMT128GX4M4C3200C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

53 73

左右 -38% 更低的延时
更快的写入速度，GB/s

13.1 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Corsair CMT128GX4M4C3200C16 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 53
读取速度，GB/s

3,510.5 13.5
写入速度，GB/s

1,423.3 13.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 2871

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology CT16G4SFD8213.C16FBR 16GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Crucial Technology BLS4G4D26BFSE.8FD2 4GB

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AMD R5S38G1601U2S 8GB

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UMAX Technology D4-2400-4GB-512X8-L 4GB

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Kingston 99U5474-013.A00LF 2GB

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Crucial Technology CT16G4DFS8266.C8FB 16GB

Kingston KHX1866C10D3/8GX 8GB

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Samsung M378A5244CB0-CWE 4GB

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SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905678-156.A00G 8GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

G Skill Intl F4-3200C16-8GTZRN 8GB

G Skill Intl F4-3200C16-8GTZRN 8GB