Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology CT16G4DFD824A.C16FE 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 14.9

测试中的平均数值

Crucial Technology CT16G4DFD824A.C16FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 73

左右 -115% 更低的延时
更快的写入速度，GB/s

11.4 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 34
读取速度，GB/s

3,510.5 14.9
写入速度，GB/s

1,423.3 11.4
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 2831

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW16GX4M2D3600C16 8GB

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Kingston 9905584-016.A00LF 4GB

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Kingston XJV223-MIE-NX 16GB

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Micron Technology 9ASF1G72PZ-2G6D1 8GB

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Kingston 99U5403-050.A00LF 4GB

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A-DATA Technology AO2P24HCST2-BTCS 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

Samsung M378B5673EH1-CF8 2GB

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Kingston 9905678-012.A00G 8GB

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Kingston 99U5403-468.A00LF 8GB

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Kingston HP26D4S9S8MHF-8 8GB

Kingston HP26D4S9S8MHF-8 8GB

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Crucial Technology BL8G30C15U4R.8FE 8GB

Crucial Technology BL8G30C15U4R.8FE 8GB