Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology CT8G4DFS8266.M8FH 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Crucial Technology CT8G4DFS8266.M8FH 8GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值

Crucial Technology CT8G4DFS8266.M8FH 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.M8FH 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 73

左右 -109% 更低的延时
更快的写入速度，GB/s

12.2 1,423.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT8G4DFS8266.M8FH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 35
读取速度，GB/s

3,510.5 16.3
写入速度，GB/s

1,423.3 12.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

476 2893

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905403-134.A00LF 2GB

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Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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Mushkin 991586 2GB

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G Skill Intl F4-4000C18-8GVK 8GB

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Corsair CMK16GX4M1A2400C16 16GB