Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology CT8G4SFS824A.C8FHD1 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 14

测试中的平均数值

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FHD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 73

左右 -103% 更低的延时
更快的写入速度，GB/s

10.5 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT8G4SFS824A.C8FHD1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 36
读取速度，GB/s

3,510.5 14.0
写入速度，GB/s

1,423.3 10.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 2519

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CM4X4GF2400C16S2 4GB

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A-DATA Technology AD5U48008G-B 8GB

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Crucial Technology BLM8G40C18U4BL.M8FE1 8GB

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Kingston KHX1600C9S3L/8G 8GB

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Corsair CMW64GX4M8Z2933C16 8GB

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Qimonda 72T128420EFA3SB2 1GB

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Super Talent F24UB16GV 16GB

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Corsair CMK8GX4M2A2400C16 4GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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G Skill Intl F4-3200C14-16GTZN 16GB

Corsair CMZ8GX3M1A1600C10 8GB

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Patriot Memory (PDP Systems) PSD416G320081 16GB

Patriot Memory (PDP Systems) PSD416G320081 16GB

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Elpida EBJ40UG8EFU5-GNL-F 4GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

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Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB