Samsung M4 70T2953EZ3-CE6 1GB vs G Skill Intl F4-4400C17-16GVK 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 22.3

测试中的平均数值

G Skill Intl F4-4400C17-16GVK 16GB

需要考虑的原因
G Skill Intl F4-4400C17-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 73

左右 -135% 更低的延时
更快的写入速度，GB/s

20.0 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4400C17-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 31
读取速度，GB/s

3,510.5 22.3
写入速度，GB/s

1,423.3 20.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 4051

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3200C14-8GTZ 8GB

G Skill Intl F4-3200C14-8GTZ 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMW16GX4M2Z2933C16 8GB

Corsair CMW16GX4M2Z2933C16 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M471A4G43MB1-CTD 32GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMK4GX4M1A2400C16 4GB

Corsair CMK4GX4M1A2400C16 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-3600C14-16GTZN 16GB

G Skill Intl F4-3600C14-16GTZN 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

G Skill Intl F4-4500C19-8GTZSWE 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston 9965589-006.E00G 8GB

Kingston 9965589-006.E00G 8GB