Samsung M4 70T2953EZ3-CE6 1GB vs Gloway International (HK) STK4U2133D15081C 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Gloway International (HK) STK4U2133D15081C 8GB

Gloway International (HK) STK4U2133D15081C 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值

Gloway International (HK) STK4U2133D15081C 8GB

需要考虑的原因
Gloway International (HK) STK4U2133D15081C 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 73

左右 -232% 更低的延时
更快的写入速度，GB/s

12.3 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Gloway International (HK) STK4U2133D15081C 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 22
读取速度，GB/s

3,510.5 16.8
写入速度，GB/s

1,423.3 12.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 3036

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD8266 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Kingston 9965589-017.D00G 8GB

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Samsung M378B5273DH0-CH9 4GB

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Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMK16GX4M2D3600C16 8GB

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Samsung M471B5273CH0-CH9 4GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Apacer Technology 78.C2GFK.AR20B 8GB

Apacer Technology 78.C2GFK.AR20B 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

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SK Hynix HMA82GS7AFR8N-UH 16GB

Kingston ACR32D4U2S8HD-8X 8GB

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Patriot Memory (PDP Systems) 3600 C20 Series 8GB

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Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Apacer Technology 78.CAGRN.40C0B 8GB

Apacer Technology 78.CAGRN.40C0B 8GB