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Samsung M4 70T2953EZ3-CE6 1GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Samsung M4 70T2953EZ3-CE6 1GB vs Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.5
    测试中的平均数值
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 73
    左右 -192% 更低的延时
  • 更快的写入速度，GB/s
    13.0 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 25
  • 读取速度，GB/s
    3,510.5 left arrow 14.5
  • 写入速度，GB/s
    1,423.3 left arrow 13.0
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    476 left arrow 3377

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
内存RAM
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingmax Semiconductor GLAG42F-18---------- 8GB
Kingston ASU21D4U5S1MB-4 4GB
Kingston ASU21D4U5S1MB-4 4GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KKN2NM-MIE 4GB
Kingston KKN2NM-MIE 4GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-2800C16-4GRK 4GB
G Skill Intl F4-2800C16-4GRK 4GB
内存RAM
SK Hynix HMT41GU7BFR8C-RD 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMW64GX4M8C3466C16 8GB
Corsair CMW64GX4M8C3466C16 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMD32GX4M2C3200C14T 16GB
Corsair CMD32GX4M2C3200C14T 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
内存RAM