Samsung M4 70T2953EZ3-CE6 1GB vs Kingston 9905711-035.A00G 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Kingston 9905711-035.A00G 8GB

Kingston 9905711-035.A00G 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 16.1

测试中的平均数值

Kingston 9905711-035.A00G 8GB

需要考虑的原因
Kingston 9905711-035.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

45 73

左右 -62% 更低的延时
更快的写入速度，GB/s

11.8 1,423.3

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 9905711-035.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 45
读取速度，GB/s

3,510.5 16.1
写入速度，GB/s

1,423.3 11.8
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

476 2723

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM3X8GA2400C11Y2R 8GB

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Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

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G Skill Intl F4-3200C14-16GTZDCB 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

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Mushkin 99[2/7/4]183 8GB