Samsung M4 70T2953EZ3-CE6 1GB vs Kingston KHYXPX-MID 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Kingston KHYXPX-MID 8GB

Kingston KHYXPX-MID 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 13.9

测试中的平均数值

Kingston KHYXPX-MID 8GB

需要考虑的原因
Kingston KHYXPX-MID 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 73

左右 -109% 更低的延时
更快的写入速度，GB/s

8.9 1,423.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Kingston KHYXPX-MID 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 35
读取速度，GB/s

3,510.5 13.9
写入速度，GB/s

1,423.3 8.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

476 2127

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264AZ-3G2J1 4GB

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Micron Technology 18ASF2G72PDZ-2G6D1 16GB

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Kingston 9965596-023.B01G 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

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G Skill Intl F4-3600C18-8GTZRX 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

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Corsair CM4X16GF3200C22S2 16GB

Crucial Technology CB8GU2400.C8ET 8GB

Crucial Technology CB8GU2400.C8ET 8GB

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Crucial Technology CT8G4DFS824A.C8FAD1 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Smart Modular SMS4WEC3C0K0446SCG 4GB

Smart Modular SMS4WEC3C0K0446SCG 4GB