Samsung M4 70T2953EZ3-CE6 1GB vs Kingston KM0VW4-MID 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Kingston KM0VW4-MID 8GB

Kingston KM0VW4-MID 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值

Kingston KM0VW4-MID 8GB

需要考虑的原因
Kingston KM0VW4-MID 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 73

左右 -92% 更低的延时
更快的写入速度，GB/s

10.6 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Kingston KM0VW4-MID 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 38
读取速度，GB/s

3,510.5 14.7
写入速度，GB/s

1,423.3 10.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 2493

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Lexar Co Limited LD4AU008G-H3200GST 8GB

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Gloway International (HK) STK4U2400D17042C 4GB

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Mushkin 991586 2GB

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Corsair CMK128GX4M4E3200C16 32GB

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Micron Technology 36ASF4G72PZ-2G1A1 32GB

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SK Hynix HMA82GS6MFR8N-TF 16GB

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Crucial Technology CT16G4SFRA32A.C8FE 16GB

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Samsung M471A1K43EB1-CWE 8GB

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Samsung M471A2K43BB1-CRC 16GB

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Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Cortus SAS 8ATF1G64AZ-2G6E1 8GB

Kingston 9965525-155.A00LF 8GB

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Corsair CMK16GX4M4C3200C16 4GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB