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Samsung M4 70T2953EZ3-CE6 1GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Samsung M4 70T2953EZ3-CE6 1GB vs Patriot Memory (PDP Systems) 3600 C14 Series 8GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.6
    测试中的平均数值
Patriot Memory (PDP Systems) 3600 C14 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 73
    左右 -284% 更低的延时
  • 更快的写入速度，GB/s
    14.7 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 19
  • 读取速度，GB/s
    3,510.5 left arrow 16.6
  • 写入速度，GB/s
    1,423.3 left arrow 14.7
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    476 left arrow 3626

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB RAM的比较

Crucial Technology BL16G32C16U4B.16FE 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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