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Samsung M4 70T5663RZ3-CF7 2GB
G Skill Intl F4-3200C16-16GTZR 16GB

Samsung M4 70T5663RZ3-CF7 2GB vs G Skill Intl F4-3200C16-16GTZR 16GB

总分
star star star star star
Samsung M4 70T5663RZ3-CF7 2GB

Samsung M4 70T5663RZ3-CF7 2GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZR 16GB

G Skill Intl F4-3200C16-16GTZR 16GB

差异 规格 评论

差异

Samsung M4 70T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M4 70T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.4
    测试中的平均数值
G Skill Intl F4-3200C16-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 61
    左右 -103% 更低的延时
  • 更快的写入速度，GB/s
    14.8 left arrow 1,903.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663RZ3-CF7 2GB
G Skill Intl F4-3200C16-16GTZR 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 30
  • 读取速度，GB/s
    4,668.9 left arrow 18.4
  • 写入速度，GB/s
    1,903.1 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    735 left arrow 3657

Samsung M4 70T5663RZ3-CF7 2GB RAM的比较

Samsung M4 70T5663QZ3-CF7 2GB
Corsair CM4X32GC3200C16K2E 32GB

G Skill Intl F4-3200C16-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M386B4G70DM0-CMA4 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-2400C15-8GNS 8GB
G Skill Intl F4-2400C15-8GNS 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Avant Technology W641GU42J9266NB 8GB
Avant Technology W641GU42J9266NB 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMW128GX4M4D3000C16 32GB
Corsair CMW128GX4M4D3000C16 32GB
内存RAM
Samsung M4 70T5663RZ3-CF7 2GB
Samsung M4 70T5663RZ3-CF7 2GB
G Skill Intl F4-3200C16-16GTZR 16GB
G Skill Intl F4-3200C16-16GTZR 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
Ramaxel Technology RMSA3330MJ78HBF-3200 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3600C16-8GTZN 8GB
G Skill Intl F4-3600C16-8GTZN 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston HP32D4S2S1ME-8 8GB
Kingston HP32D4S2S1ME-8 8GB
内存RAM
Crucial Technology CT51264BA160B.C16F 4GB
Crucial Technology CT51264BA160B.C16F 4GB
G Skill Intl F4-3333C16-8GVK 8GB
G Skill Intl F4-3333C16-8GVK 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Samsung M393A4K40BB2-CTD 32GB
Samsung M393A4K40BB2-CTD 32GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Samsung M393A2G40EB1-CPB 16GB
Samsung M393A2G40EB1-CPB 16GB
内存RAM