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Samsung M471A1G44BB0-CWE 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB

Samsung M471A1G44BB0-CWE 8GB vs Crucial Technology CT16G4SFRA32A.C8FE 16GB

总分
star star star star star
Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

总分
star star star star star
Crucial Technology CT16G4SFRA32A.C8FE 16GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB

差异 规格 评论

差异

Samsung M471A1G44BB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44BB0-CWE 8GB
报告一个错误
Crucial Technology CT16G4SFRA32A.C8FE 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA32A.C8FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 60
    左右 -54% 更低的延时
  • 更快的读取速度，GB/s
    15.7 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A1G44BB0-CWE 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 39
  • 读取速度，GB/s
    15.3 left arrow 15.7
  • 写入速度，GB/s
    11.0 left arrow 12.0
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2359 left arrow 2958

Samsung M471A1G44BB0-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4SFRA32A.C8FE 16GB RAM的比较

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
内存RAM
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
SK Hynix HMA451R7MFR8N-TF 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C14-16GVR 16GB
G Skill Intl F4-3200C14-16GVR 16GB
内存RAM
Crucial Technology CT8G4DFRA266.C8FN 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Kingston KHYXPX-MID 8GB
Kingston KHYXPX-MID 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5663-007.A00G 16GB
Kingston 99U5663-007.A00G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR16GX4M2Z3200C16 8GB
Corsair CMR16GX4M2Z3200C16 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Corsair CMW16GX4M2Z3600C18 8GB
Corsair CMW16GX4M2Z3600C18 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
SK Hynix HMA451U7AFR8N-TF 4GB
SK Hynix HMA451U7AFR8N-TF 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair CM4X16GE2133C15S2 16GB
Corsair CM4X16GE2133C15S2 16GB
内存RAM