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Samsung M471A1K43DB1-CTD 8GB
G Skill Intl F4-3333C16-16GTZSW 16GB

Samsung M471A1K43DB1-CTD 8GB vs G Skill Intl F4-3333C16-16GTZSW 16GB

总分
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分
star star star star star
G Skill Intl F4-3333C16-16GTZSW 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB

差异 规格 评论

差异

Samsung M471A1K43DB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
G Skill Intl F4-3333C16-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3333C16-16GTZSW 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 35
    左右 -17% 更低的延时

规格

完整的技术规格清单
Samsung M471A1K43DB1-CTD 8GB
G Skill Intl F4-3333C16-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 30
  • 读取速度，GB/s
    15.7 left arrow 12.6
  • 写入速度，GB/s
    11.8 left arrow 8.8
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2767 left arrow 2659

Samsung M471A1K43DB1-CTD 8GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3333C16-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Corsair CMSX32GX4M2A3200C22 16GB
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内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
G Skill Intl F4-3333C16-16GTZSW 16GB
G Skill Intl F4-3333C16-16GTZSW 16GB
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Kingston 99U5474-010.A00LF 2GB
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Corsair CMK32GX4M2E3200C16 16GB
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内存RAM
Kingston 9905403-444.A00LF 4GB
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G Skill Intl F4-3200C14-16GTRG 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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