Samsung M471A1K43DB1-CTD 8GB vs Kingston KF3600C18D4/16GX 16GB

总分

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分

Kingston KF3600C18D4/16GX 16GB

Kingston KF3600C18D4/16GX 16GB

差异规格评论

差异

Samsung M471A1K43DB1-CTD 8GB

需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Kingston KF3600C18D4/16GX 16GB

需要考虑的原因
Kingston KF3600C18D4/16GX 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 35

左右 -21% 更低的延时
更快的读取速度，GB/s

17.1 15.7

测试中的平均数值
更快的写入速度，GB/s

13.5 11.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A1K43DB1-CTD 8GB

Kingston KF3600C18D4/16GX 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

35 29
读取速度，GB/s

15.7 17.1
写入速度，GB/s

11.8 13.5
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2767 3432

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston K9CXF2-MIE 8GB

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Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMK64GX4M4A2666C16 16GB

Corsair CMK64GX4M4A2666C16 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

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Samsung M393B2G70BH0-CK0 16GB

G Skill Intl F4-3200C14-16GTRG 16GB

G Skill Intl F4-3200C14-16GTRG 16GB