Samsung M471A1K43EB1-CWE 8GB vs SK Hynix HMA81GS6JJR8N-VK 8GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

总分

SK Hynix HMA81GS6JJR8N-VK 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

差异规格评论

差异

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

更快的读取速度，GB/s

16 15.7

测试中的平均数值
更快的写入速度，GB/s

12.4 11.9

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

SK Hynix HMA81GS6JJR8N-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6JJR8N-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 46

左右 -35% 更低的延时

规格

完整的技术规格清单

Samsung M471A1K43EB1-CWE 8GB

SK Hynix HMA81GS6JJR8N-VK 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

46 34
读取速度，GB/s

16.0 15.7
写入速度，GB/s

12.4 11.9
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2660 2803

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

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Kingston 9905712-035.A00G 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Samsung M471A1K43BB1-CTD 8GB

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Elpida EBE21UE8ACUA-8G-E 2GB

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SK Hynix HMA82GU7MFR8N-TF 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMK64GX4M2E3200C16 32GB

Corsair CMK64GX4M2E3200C16 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Panram International Corporation W4U2133PS-8G 8GB

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Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

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Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB