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Samsung M471A2K43EB1-CWE 16GB
Kingston KF556C40-16 16GB

Samsung M471A2K43EB1-CWE 16GB vs Kingston KF556C40-16 16GB

总分
star star star star star
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

总分
star star star star star
Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB

差异 规格 评论

差异

Samsung M471A2K43EB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 13.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston KF556C40-16 16GB 需要考虑的原因
Kingston KF556C40-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 55
    左右 -112% 更低的延时

规格

完整的技术规格清单
Samsung M471A2K43EB1-CWE 16GB
Kingston KF556C40-16 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR5
  • PassMark中的延时，ns
    55 left arrow 26
  • 读取速度，GB/s
    15.8 left arrow 14.9
  • 写入速度，GB/s
    13.8 left arrow 13.0
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    2701 left arrow 3458

Samsung M471A2K43EB1-CWE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB

Kingston KF556C40-16 16GB RAM的比较

G Skill Intl F4-3200C16-8GVKB 8GB
Corsair CM4B16G4J2400A16K2-O 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology DQKD1A08 1GB
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内存RAM
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A-DATA Technology AO1P24HC8T1-BSFS 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston K6VDX7-HYD 8GB
内存RAM
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内存RAM
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内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
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