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Samsung M471A4G43AB1-CWE 32GB
Samsung M471A1G44BB0-CWE 8GB

Samsung M471A4G43AB1-CWE 32GB vs Samsung M471A1G44BB0-CWE 8GB

总分
star star star star star
Samsung M471A4G43AB1-CWE 32GB

Samsung M471A4G43AB1-CWE 32GB

总分
star star star star star
Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

差异 规格 评论

差异

Samsung M471A4G43AB1-CWE 32GB 需要考虑的原因
Samsung M471A4G43AB1-CWE 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 60
    左右 25% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 11.0
    测试中的平均数值
Samsung M471A1G44BB0-CWE 8GB 需要考虑的原因
Samsung M471A1G44BB0-CWE 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M471A4G43AB1-CWE 32GB
Samsung M471A1G44BB0-CWE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 60
  • 读取速度，GB/s
    15.6 left arrow 15.3
  • 写入速度，GB/s
    12.8 left arrow 11.0
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2359

Samsung M471A4G43AB1-CWE 32GB RAM的比较

Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A1G44BB0-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Kingston KHX3200C18D4/4G 4GB
Kingston KHX3200C18D4/4G 4GB
内存RAM
Kingston KHX318C10FR/8G 8GB
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Panram International Corporation W4N2666PS-16G 16GB
Panram International Corporation W4N2666PS-16G 16GB
内存RAM
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Kingston 9965525-144.A00LF 8GB
Tanbassh 8G 2666MHZ 8GB
Tanbassh 8G 2666MHZ 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2800C15-4GVR 4GB
G Skill Intl F4-2800C15-4GVR 4GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMR64GX4M4C3333C16 16GB
Corsair CMR64GX4M4C3333C16 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Corsair CMR16GX4M2C3466C16 8GB
Corsair CMR16GX4M2C3466C16 8GB
内存RAM
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5173BH0-CK0 4GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Kllisre M378A1K43BB2-CRC 8GB
Kllisre M378A1K43BB2-CRC 8GB
内存RAM