Samsung M471A5244CB0-CWE 4GB vs Corsair CMK8GX4M2A2400C14 4GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的写入速度，GB/s

12.0 11.9

测试中的平均数值
更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

Corsair CMK8GX4M2A2400C14 4GB

需要考虑的原因
Corsair CMK8GX4M2A2400C14 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 38

左右 -15% 更低的延时
更快的读取速度，GB/s

16.1 15.5

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Corsair CMK8GX4M2A2400C14 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 33
读取速度，GB/s

15.5 16.1
写入速度，GB/s

12.0 11.9
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2283 2730

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-090.A01LF 4GB

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Samsung M393A2G40EB2-CTD 16GB

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Super Talent F26UB16GH 16GB

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Crucial Technology CT102464BA160B.M16 8GB

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Crucial Technology BL4G24C16U4B.8FE 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

AMD R5316G1609U2K 8GB

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G Skill Intl F4-2400C15-4GRB 4GB

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AMD R748G2400S2S 8GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Kingston MSI24D4S7S8MH-8 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3300C16-8GTZKW 8GB

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