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Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-4266C19-8GTZSW 8GB

Samsung M471A5244CB0-CWE 4GB vs G Skill Intl F4-4266C19-8GTZSW 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-4266C19-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-4266C19-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 38
    左右 -124% 更低的延时
  • 更快的读取速度，GB/s
    22.1 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    18.0 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-4266C19-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 17
  • 读取速度，GB/s
    15.5 left arrow 22.1
  • 写入速度，GB/s
    12.0 left arrow 18.0
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 3847

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4266C19-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
Crucial Technology BL8G30C15U4B.M8FE1 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Corsair CMD32GX4M4B3866C18 8GB
Corsair CMD32GX4M4B3866C18 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMWX16GC3000C16W4D 16GB
Corsair CMWX16GC3000C16W4D 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-4000C17-8GTRS 8GB
G Skill Intl F4-4000C17-8GTRS 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMR64GX4M8C3000C15 8GB
Corsair CMR64GX4M8C3000C15 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M2B3000C15 16GB
Corsair CMK32GX4M2B3000C15 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Ramsta Ramsta-2400Mhz-8G 8GB
Ramsta Ramsta-2400Mhz-8G 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-3600C16-16GTZNC 16GB
G Skill Intl F4-3600C16-16GTZNC 16GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston CBD32D4S2D8HD-16 16GB
Kingston CBD32D4S2D8HD-16 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Corsair CMR16GX4M2C 8GB
Corsair CMR16GX4M2C 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Corsair CMW128GX4M4E3200C16 32GB
Corsair CMW128GX4M4E3200C16 32GB
内存RAM