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Samsung M471A5244CB0-CWE 4GB
Kingston 9905702-019.A00G 8GB
比较
Samsung M471A5244CB0-CWE 4GB vs Kingston 9905702-019.A00G 8GB
总分
Samsung M471A5244CB0-CWE 4GB
总分
Kingston 9905702-019.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
低于PassMark测试中的延时,ns
38
87
左右 56% 更低的延时
更快的读取速度,GB/s
15.5
12.6
测试中的平均数值
更快的写入速度,GB/s
12.0
9.8
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Kingston 9905702-019.A00G 8GB
报告一个错误
规格
完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Kingston 9905702-019.A00G 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
38
87
读取速度,GB/s
15.5
12.6
写入速度,GB/s
12.0
9.8
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2283
1849
Samsung M471A5244CB0-CWE 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905702-019.A00G 8GB RAM的比较
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-2400C15-8GTZR 8GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905702-019.A00G 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Golden Empire CL16-18-18 D4-3400 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Samsung M471A5244CB0-CWE 4GB
Kingston 9965589-008.D01G 8GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK8GX4M1D2400C14 8GB
Team Group Inc. Vulcan-1600 4GB
Kingston 9905713-008.A00G 4GB
Crucial Technology CT51264BA1339.C16F 4GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Samsung DDR3 8GB 1600MHz 8GB
Dust Leopard DDR4-2400 C17 4GB 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMW16GX4M1Z3200C16 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
报告一个错误
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Bug description
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