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Samsung M471A5244CB0-CWE 4GB
Kingston KHX3600C17D4/8GX 8GB

Samsung M471A5244CB0-CWE 4GB vs Kingston KHX3600C17D4/8GX 8GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB

差异 规格 评论

差异

Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston KHX3600C17D4/8GX 8GB 需要考虑的原因
Kingston KHX3600C17D4/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 38
    左右 -36% 更低的延时
  • 更快的读取速度，GB/s
    18.8 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.1 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A5244CB0-CWE 4GB
Kingston KHX3600C17D4/8GX 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 28
  • 读取速度，GB/s
    15.5 left arrow 18.8
  • 写入速度，GB/s
    12.0 left arrow 16.1
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2283 left arrow 3664

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KHX3600C17D4/8GX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905474-019.A00LF 2GB
Kingston 9905474-019.A00LF 2GB
G Skill Intl F4-4000C19-16GTRG 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMSX64GX4M4A2400C16 16GB
Corsair CMSX64GX4M4A2400C16 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMK16GX4M4A2400C14 4GB
Corsair CMK16GX4M4A2400C14 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Corsair CMK16GX4M1D3000C16 16GB
Corsair CMK16GX4M1D3000C16 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMW32GX4M4C3200C14 8GB
Corsair CMW32GX4M4C3200C14 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3466C16-16GTZ 16GB
G Skill Intl F4-3466C16-16GTZ 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston ACR26D4S9S8MH-8 8GB
Kingston ACR26D4S9S8MH-8 8GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston KHX3466C19D4/8G 8GB
Kingston KHX3466C19D4/8G 8GB
内存RAM