Samsung M471A5244CB0-CWE 4GB vs Micron Technology 9ASF51272AZ-2G3B1 4GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

Micron Technology 9ASF51272AZ-2G3B1 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

更快的读取速度，GB/s

15.5 15.4

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Micron Technology 9ASF51272AZ-2G3B1 4GB

需要考虑的原因
Micron Technology 9ASF51272AZ-2G3B1 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的写入速度，GB/s

13.0 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

Micron Technology 9ASF51272AZ-2G3B1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

15.5 15.4
写入速度，GB/s

12.0 13.0
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2283 2854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4X8GF3000C15K4 8GB

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Kingston ACR16D3LFS1KBG/2G 2GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Crucial Technology CB8GU2400.C8ET 8GB

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Apacer Technology 78.C2GFP.C700B 8GB

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Peak Electronics 256X64M-67E 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingston KHX2666C13/16GX 16GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4SFRA266.C8FB 16GB

Crucial Technology CT16G4SFRA266.C8FB 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

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Crucial Technology BLS4G4S240FSD.8FBD 4GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

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Ramaxel Technology RMSA3330ME88HCF-3200 32GB