Samsung M471A5244CB0-CWE 4GB vs OCMEMORY OCM3200CL16D-16GBN 8GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

总分

OCMEMORY OCM3200CL16D-16GBN 8GB

OCMEMORY OCM3200CL16D-16GBN 8GB

差异规格评论

差异

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 55

左右 31% 更低的延时
更快的写入速度，GB/s

12.0 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

OCMEMORY OCM3200CL16D-16GBN 8GB

需要考虑的原因
OCMEMORY OCM3200CL16D-16GBN 8GB

报告一个错误

更快的读取速度，GB/s

19 15.5

测试中的平均数值

规格

完整的技术规格清单

Samsung M471A5244CB0-CWE 4GB

OCMEMORY OCM3200CL16D-16GBN 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 55
读取速度，GB/s

15.5 19.0
写入速度，GB/s

12.0 9.0
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2283 2239

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS16G4D240FSB.16FBD 16GB

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Kingston 99U5474-010.A00LF 2GB

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Samsung M471A1K43BB1-CTD 8GB

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Micron Technology 16ATF2G64AZ-2G3H1 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CM4X4GF2133C13K4 4GB

Corsair CM4X4GF2133C13K4 4GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

Crucial Technology M471B1G73DB0-YK0 8GB

Crucial Technology M471B1G73DB0-YK0 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB

Crucial Technology BLS16G4D240FSE.16FAD 16GB