Samsung M471B1G73BH0-YH9 8GB vs Kingston XK2M26-MIE 16GB

总分

Samsung M471B1G73BH0-YH9 8GB

Samsung M471B1G73BH0-YH9 8GB

总分

Kingston XK2M26-MIE 16GB

Kingston XK2M26-MIE 16GB

差异规格评论

差异

Samsung M471B1G73BH0-YH9 8GB

需要考虑的原因
Samsung M471B1G73BH0-YH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 26% 更低的延时

Kingston XK2M26-MIE 16GB

需要考虑的原因
Kingston XK2M26-MIE 16GB

报告一个错误

更快的读取速度，GB/s

14 9.5

测试中的平均数值
更快的写入速度，GB/s

6.4 5.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B1G73BH0-YH9 8GB

Kingston XK2M26-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 39
读取速度，GB/s

9.5 14.0
写入速度，GB/s

5.1 6.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1646 2297

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston 9905403-156.A00LF 2GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

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G Skill Intl F4-4000C17-8GTZRB 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

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G Skill Intl F4-2400C16-8GFXR 8GB